ROHM Unveils BM6GD11BFJ-LB Gate Driver IC to Advance High-Voltage GaN Efficiency
NewsROHM Semiconductor, a global leader in semiconductor innovation headquartered in Japan, has announced a major advancement in gallium nitride (GaN) power applications with the launch of its new gate driver IC, the BM6GD11BFJ-LB. Officially introduced in June 2025, this next-generation gate driver is specifically designed for 600V-class high-voltage GaN HEMTs (High Electron Mobility Transistors), targeting […]